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IXTP3N50D2

IXYS Corporation
Part Number IXTP3N50D2
Manufacturer IXYS Corporation
Description N-Channel MOSFET
Published Dec 4, 2010
Detailed Description Depletion Mode MOSFET N-Channel IXTA3N50D2 IXTP3N50D2 D VDSX = ID(on) >  RDS(on) 500V 3A 1.5 G S Symbol VDSX VGSX...
Datasheet PDF File IXTP3N50D2 PDF File

IXTP3N50D2
IXTP3N50D2

Overview
Depletion Mode MOSFET N-Channel IXTA3N50D2 IXTP3N50D2 D VDSX = ID(on) >  RDS(on) 500V 3A 1.
5 G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 500 V 20 V 30 V 125 W - 55 .
.
.
+150 C 150 C - 55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 2.
5 g 3.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 1.
5A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min.
Typ.
Max.
500 V - 2.
0 - 4.
5 V 100 nA 5 A 50 A 1.
5  3 A TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Featu...


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