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CY62136CV18

Cypress Semiconductor
Part Number CY62136CV18
Manufacturer Cypress Semiconductor
Description 128K x 16 Static RAM
Published Dec 9, 2010
Detailed Description CY62136CV18 MoBL2™ 128K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.6...
Datasheet PDF File CY62136CV18 PDF File

CY62136CV18
CY62136CV18

Overview
CY62136CV18 MoBL2™ 128K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.
65V−1.
95V • Pin Compatible with CY62136BV18 • Ultra-low active power — Typical Active Current: 0.
5 mA @ f = 1 MHz — Typical Active Current: 1.
5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when deselected (CE HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.
If Byte Low Enable (BLE) is LO...


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