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MBD770DWT1G

ON Semiconductor
Part Number MBD770DWT1G
Manufacturer ON Semiconductor
Description (MBDxx0DWT1G) Dual Schottky Barrier Diodes
Published Dec 9, 2010
Detailed Description MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are mov...
Datasheet PDF File MBD770DWT1G PDF File

MBD770DWT1G
MBD770DWT1G

Overview
MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages.
The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package.
The SOT−363 is ideal for low−power surface mount applications where board space is at a premium, such as portable products.
Surface Mount Comparisons: SOT−363 Area (mm2) 4.
6 120 2 SOT−23 7.
6 225 1 http://onsemi.
com Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode Max Package PD (mW) Device Count 1 SC−88 / SOT−363 CASE 419B STYLE 6 Space Savings: Package SOT−363 1  SOT−23 40% 2  SOT−23 70% The MBD110DW, MBD330DW, and MBD770DW devices are spin−offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT −23 devices.
They are designed for high−efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital applications.
Features MARKING DIAGRAM 6 xx M G G 1 • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1G MBD330DWT1G MBD770DWT1G Symbol VR Value 7.
0 30 70 120 − 55 to +125 − 55 to +150 Unit V = Device Code Refer to Ordering Table, page 2 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) xx ORDERING INFORMATION mW °C °C See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Condit...


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