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STP8NC70ZFP

STMicroelectronics
Part Number STP8NC70ZFP
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Dec 13, 2010
Detailed Description STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected Powe...
Datasheet PDF File STP8NC70ZFP PDF File

STP8NC70ZFP
STP8NC70ZFP


Overview
STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.
90Ω - 6.
8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP8NC70Z/FP STB8NC70Z/-1 s s VDSS 700V 700V RDS(on) < 1.
2 Ω < 1.
2 Ω ID 6.
8 A 6.
8 A 1 3 s s s TYPICAL RDS(on) = 0.
9 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D2PAK 1 3 2 TO-220 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s 12 3 I2PAK ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature .
(*)Pulse Value STP(B)8NC70Z(-1) 700 700 ± 25 6.
8 4.
3 27 135 1.
08 ±50 3 3 -–65 to 150 150 2000 6.
8(*) 4.
3(*) 27(*) 40 0.
32 STP8NC70ZFP Unit V V V A A A W W/°C mA KV V/ns V °C °C (•)Pulse width limited by safe operating area December 2002 (1)ISD ≤6.
8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX width Limited by maximum temperature allowed 1/13 www.
DataSheet.
in STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 THERMAL DATA TO-220 / D2PAK I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead T...


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