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SEMIX252GB126HDS

Semikron International
Part Number SEMIX252GB126HDS
Manufacturer Semikron International
Description IGBT
Published Dec 26, 2010
Detailed Description SEMiX252GB126HDs SEMiX® 2s Trench IGBT Modules SEMiX252GB126HDs Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet PDF File SEMIX252GB126HDS PDF File

SEMIX252GB126HDS
SEMIX252GB126HDS

Overview
SEMiX252GB126HDs SEMiX® 2s Trench IGBT Modules SEMiX252GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max.
• Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel Tj = 25 °C Tj = 125 °C VGE...


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