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BSD316SN

Infineon Technologies AG
Part Number BSD316SN
Manufacturer Infineon Technologies AG
Description 2 Small-Signal-Transistor
Published Jan 23, 2011
Detailed Description BSD316SN OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanc...
Datasheet PDF File BSD316SN PDF File

BSD316SN
BSD316SN

Overview
BSD316SN OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.
5 V ID 30 160 280 1.
4 A V mΩ PG-SOT363 6 5 4 1 2 3 Type BSD316SN Package Tape and Reel Information Marking X7s Lead Free Yes Packing Non dry PG-SOT363 L6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.
4 A, R GS=25 Ω I D=1.
4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 1.
4 1.
1 5.
6 3.
7 mJ Unit A Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg 6 ±20 kV/µs V W °C T A=25 °C 0.
5 -55 .
.
.
150 JESD22-A114 -HBM 0 (<250V) 260 °C 55/150/56 Rev 2.
1 page 1 2009-02-11 www.
DataSheet.
in BSD316SN Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) Values typ.
max.
Unit - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=0 V, I D=3,7 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=1.
1 A V GS=10 V, I D=1.
4 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.
1 A 30 1.
2 1.
6 2.
0 1 µA V - 192 120 2.
3 100 100 280 160 S nA mΩ Performed on 40mm2 FR4 PCB.
The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB.
1) Rev 2.
1 page 2 2009-02-11 www.
DataSheet.
in B...


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