DatasheetsPDF.com

SMP550G-EJ

Seme LAB
Part Number SMP550G-EJ
Manufacturer Seme LAB
Description P.I.N. PHOTODIODE
Published Feb 1, 2011
Detailed Description SMP550G-EJ www.DataSheet4U.com MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • EXCELLENT...
Datasheet PDF File SMP550G-EJ PDF File

SMP550G-EJ
SMP550G-EJ

Overview
SMP550G-EJ www.
DataSheet4U.
com MECHANICAL DATA Dimensions in mm.
P.
I.
N.
PHOTODIODE FEATURES • • • • • • • • EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5.
9 ± 0.
1 Ø 9.
1 ± 0.
2 Ø 8.
1 ± 0.
1 SENSITIVE SURFACE Ø 0.
45 LEAD 5.
08 ± 0.
2 20 3.
8 ± 0.
2 Note 1 Contact Semelab Plc for filter options DESCRIPTION 2 1 The SMP550G-EJ is a Silicon P.
I.
N.
photodiode incorporated in a hermetic metal can package.
The electrical terminations are via two leads of diameter 0.
018" on a pitch of 0.
2".
The can structure permits a wide range of optical filter options.
The cathode of the photodiode is electrically connected to the package.
The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed.
The photodiode structure has been optimised for high sensitivity, light measurement applications.
The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference.
TO-39 Package Pin 1 – Anode Pin 2 – Cathode & Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
-40°C to +70°C -45°C to +80°C 0.
35% per °C x2 per 8°C rise 60V Prelim.
1/98 SMP550G-EJ www.
DataSheet4U.
com CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions.
Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min.
0.
45 Typ.
0.
55 5.
19 Max.
Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 16 8...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)