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ST2N3416

SEMTECH ELECTRONICS
Part Number ST2N3416
Manufacturer SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier
Published Feb 10, 2011
Detailed Description ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifie...
Datasheet PDF File ST2N3416 PDF File

ST2N3416
ST2N3416


Overview
ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA.
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0.
19g Absolute Maximum Ratings* (Ta = 25℃) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above 25 C Junction Temperature Storage Temperature Range O Value 50 50 5 500 625 5 150 -55 to +150 Unit V V V mA mW mW/ C O O O VCEO VCBO VEBO IC Ptot Tj TS C C *These ratings are limiting values above which the serviceability of semiconductor device may be impaired.
Notes: 1) These ratings are based on a maximum junction temperature of 150℃ 2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
SEMTECH ELECTRONICS LTD.
® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=4.
5V, IC=2mA Small Signal Current Gain at VCE=4.
5V, IC=2mA, f =1kHz Collector Cutoff Current at VCB=25V at VCB=18V, Ta=100℃ Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=3mA Base Saturation Voltage at IC=50mA, IB=3mA Collector Emitter Breakdown Voltage* at IC=10Ma Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case *Pulse Test : Pulse width≦300μs, Duty Cycle≦2%.
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75 180 75 180 0.
6 50 50 5 - Typ.
- Max.
225 540 100 15 100 0.
3 1.
3 200 83.
3 Unit nA μA nA V V V V V O O ST 2N3416 ST 2N3417 ST 2N3416 ST 2N3417 hFE hFE hfe hfe ICBO ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO RthA RthC C /W C /W SEMTECH ELECTRONICS LTD.
® (Subsidiary of Sino-Tech International Holdings Limited, a c...



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