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BIC702C

Hitachi Semiconductor
Part Number BIC702C
Manufacturer Hitachi Semiconductor
Description VHF/UHF RF Amplifier
Published Feb 11, 2011
Detailed Description BIC702C Bias Controlled Monolithic IC VHF/UHF RF Amplifier www.DataSheet4U.com ADE-208-814D (Z) 5th. Edition Mar. 2001 ...
Datasheet PDF File BIC702C PDF File

BIC702C
BIC702C

Overview
BIC702C Bias Controlled Monolithic IC VHF/UHF RF Amplifier www.
DataSheet4U.
com ADE-208-814D (Z) 5th.
Edition Mar.
2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.
); To reduce using parts cost & PC board space.
• High |yfs| ; |yfs| = 29 mS typ.
( f = 1kHz) • Low noise; NF = 1.
0 dB typ.
(at f = 200 MHz), NF = 1.
6 dB typ.
(at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C = 200pF, Rs = 0 conditions.
• Provide mini mold package; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
2.
Marking is “BZ–”.
BIC702C is individual type number of HITACHI BICMIC.
BIC702C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 100 150 –55 to +150 Unit www.
DataSheet4U.
com V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — 0.
5 10 24 1.
6 0.
7 — 24 — 18 — Typ — — — — 0.
7 13 29 2.
0 1.
1 0.
02 28.
5 1.
0 23 1.
6 Max — — — +100 1.
0 16 34 2.
3 1.
5 0.
05 — 1.
5 — 2.
2 Unit V V V nA V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200µA VG2S = 0,VG1 = open I G1 =+10µA, VG2S = VDS = 0 I G2 = +10 µA, VG1S = VDS = 0 VG2S = +5V, V G1S = VDS = 0 VDS = 5V, ID = 100µA VG1 = open VDS = 5V , VG2S = 4V VG1 = open VDS = 5V, ID = 13mA VG2S =4V, f = 1kHz VDS = 5V, VG2S =4V VG1 = open f = 1MHz VDS = 5V, VG2S =4V VG1 = open f = 200MHz VDS = 5V, VG2S =4V VG1 = open f = 900MHz Gate2 to source cutoff current I G2SS Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance I D(op) |yfs| c iss c oss Reverse transfer capacitance c rss Power gain Noise figure Power gain N...


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