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NTLGF3402P

ON Semiconductor
Part Number NTLGF3402P
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Feb 16, 2011
Detailed Description NTLGF3402P MOSFET – Power, P-Channel, Schottky Diode, Schotty Barrier Diode, FETKY, DFN6 -20 V, -3.9 A, 2.0 A Features...
Datasheet PDF File NTLGF3402P PDF File

NTLGF3402P
NTLGF3402P


Overview
NTLGF3402P MOSFET – Power, P-Channel, Schottky Diode, Schotty Barrier Diode, FETKY, DFN6 -20 V, -3.
9 A, 2.
0 A Features • Flat Lead 6 Terminal Package 3x3x1 mm • Enhanced Thermal Characteristics • Low VF and Low Leakage Schottky Diode • Reduced Gate Charge to Improve Switching Response • This is a Pb−Free Device Applications • Buck Converter • High Side DC−DC Conversion Circuits • Power Management in Portable, HDD and Computing MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C ID State TA = 85°C t ≤ 10 s TA = 25°C Steady PD State TA = 25°C t ≤ 10 s −2.
7 A −2.
0 −3.
9 1.
6 W 3.
0 Continuous Drain Current (Note 2) Power Dissipation (Note 2) TA = 25°C ID Steady TA = 85°C State TA = 25°C PD −2.
3 A −1.
7 1.
14 W Pulsed Drain Current tp = 10 ms IDM 11 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 1.
1 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces).
2.
Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.
5 in sq).
http://onsemi.
com V(BR)DSS −20 V MOSFET RDS(on) TYP 110 mW @ −4.
5 V ID MAX −3.
9 A VR MAX 20 V SCHOTTKY DIODE VF TYP 0.
36 V IF MAX 2.
0 A 25 123 3 Heatsink 1 4 6 654 1, 6 = Anode 2, 5 = Source 3 = Gate 4 = Drain/Cathode MARKING DIAGRAMS 1 3402 DFN6 AYWW 1 CASE 506AH G 3402 A Y WW G = Specific Device Code = Assembly Location = Year...



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