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NTD5867NL

Part Number	NTD5867NL
Manufacturer	ON Semiconductor
Description	N-Channel Power MOSFET
Published	Feb 16, 2011
Detailed Description	NTD5867NL MOSFET – Power, N-Channel 60 V, 20 A, 39 mW Features • Low RDS(on) • High Current Capability • 100% Avalanch...
Datasheet	NTD5867NL PDF File

Overview

NTD5867NL MOSFET – Power, N-Channel 60 V, 20 A, 39 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS VGS ID PD IDM TJ, Tstg 60 ±20 ±30 20 13 36 76 −55 to 150 V V V A W A °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 19 A, L = 0.
1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device...

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NTD5867NL N-Channel Power MOSFET - ON Semiconductor

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