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LTE-4206C

Lite-On Technology
Part Number LTE-4206C
Manufacturer Lite-On Technology
Description GaAlAs T-1 Standard 3 Infrared Emitting Diode
Published Feb 17, 2011
Detailed Description GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-lin...
Datasheet PDF File LTE-4206C PDF File

LTE-4206C
LTE-4206C


Overview
GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-line intensity and radiant intensity ranges.
Low cost plastic end looking package.
Mechanically and spectrally matched to the LTR-4206 series of phototransistor.
The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes.
Package Dimensions Description The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.
The LTE-4206 series provides a broad range of intensity selection.
Suffix C-smoke color lens.
Notes: 1.
All dimensions are in milli...



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