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IPB036N12N3G

Infineon Technologies AG
Part Number IPB036N12N3G
Manufacturer Infineon Technologies AG
Description Power-Transistor
Published Feb 17, 2011
Detailed Description IPB036N12N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and DC/DC converters • Excellent...
Datasheet PDF File IPB036N12N3G PDF File

IPB036N12N3G
IPB036N12N3G

Overview
IPB036N12N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 120 3.
6 180 V mΩ A Type IPB036N12N3 G Package Marking PG-TO263-7 036N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse3) Gate source volta...


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