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IPB03N03LB

Infineon Technologies AG
Part Number IPB03N03LB
Manufacturer Infineon Technologies AG
Description OptiMOS3 Power-Transistor
Published Feb 17, 2011
Detailed Description IPB03N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JED...
Datasheet PDF File IPB03N03LB PDF File

IPB03N03LB
IPB03N03LB


Overview
IPB03N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 2.
8 80 V mΩ A PG-TO263-3 PG-TO220-3-1 Type IPB03N03LB Package P-TO263-3 Marking 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation www.
DataSheet4U.
com Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 80 80 320 580 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=80 A, R GS=25 Ω I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 150 -55 .
.
.
175 55/175/56 J-STD20 and JESD22 Rev.
0.
94 page 1 2006-05-10 IPB03N03LB Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=100 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=55 A V GS=10 V, I D=55 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=60 A 30 1.
2 1.
6 0.
1 2 1 µA V 1 62 40 K/W Values typ.
max.
Unit - 10 10 3.
2 2.
3 0.
9 139 100 100 3.
9 2.
8 Ω S nA mΩ 2) 3) 4) 5) Current is limited by bondwire; with an R thJC=...


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