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EIA1314-4P

Excelics Semiconductor
Part Number EIA1314-4P
Manufacturer Excelics Semiconductor
Description 13.75-14.5 GHz 4W Internally Matched Power FET
Published Feb 17, 2011
Detailed Description Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYP...
Datasheet PDF File EIA1314-4P PDF File

EIA1314-4P
EIA1314-4P

Overview
Excelics • • • • • • 13.
75-14.
5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.
5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.
5/7.
5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs.
Contact factory.
Effective 03/2003 13.
75-14.
5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Gain at 1dB Compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Power Added Efficiency at 1dB compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, ...


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