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DMN3730UFB4

Diodes
Part Number DMN3730UFB4
Manufacturer Diodes
Description 30V N-Channel MOSFET
Published Feb 20, 2011
Detailed Description DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2...
Datasheet PDF File DMN3730UFB4 PDF File

DMN3730UFB4
DMN3730UFB4

Overview
DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.
5V 30V 560mΩ @ VGS= 2.
5V ID TA = 25°C 0.
9A 0.
7A Features and Benefits • • • • • • • • 0.
4mm ultra low profile package for thin application 2 0.
6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free.
"Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high...


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