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CHM4204PAPT

Chenmko Enterprise
Part Number CHM4204PAPT
Manufacturer Chenmko Enterprise
Description N-Channel Enhancement Mode Field Effect Transistor
Published Feb 21, 2011
Detailed Description CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts APPLICATION...
Datasheet PDF File CHM4204PAPT PDF File

CHM4204PAPT
CHM4204PAPT

Overview
CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts APPLICATION * Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM4204PAPT CURRENT 24 Ampere FEATURE * Small package.
(TO-252A) * Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
.
280 (7.
10) .
238 (6.
05) .
220 (5.
59) .
195 (4.
95) TO-252A .
094 (2.
40) .
087 (2.
20) .
035 (0.
89) .
018 (0.
45) * N-Channel Enhancement (1) (3) (2) .
417 (10.
6) .
346 (8.
80) CONSTRUCTION .
261 (6.
63) .
213 (5.
40) .
035 (0.
90) .
025 (0.
64) .
102 (2.
59) .
078 (1.
98) 1 Gate .
024 (0.
61) .
016 (0.
40) CIRCUIT (1) G D (3) 2 Source 3 Drain( Heat Sink ) S (2) Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted CHM4204PAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 40 V V ±20 24 ID - Pulsed PD TJ TSTG (Note 3) A 90 31 -55 to 150 -55 to 150 W °C °C Maximum Power Dissipation at Tc = 25 °C Operating Temperature Range Storage Temperature Range Note : 1.
Surface Mounted on FR4 Board , t <=10sec 2.
Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3.
Repetitive Rating , Pulse width linited by maximum junction temperature 4.
Guaranteed by design , not subject to production trsting Thermal characteristics www.
DataSheet4U.
com RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2007-06 RATING CHARACTERISTIC CURVES ( CHM4204PAPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 32 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 40 1 +100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage ...


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