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APTC60HM24T3G

Microsemi
Part Number APTC60HM24T3G
Manufacturer Microsemi
Description Full bridge Super Junction MOSFET Power Module
Published Feb 22, 2011
Detailed Description APTC60HM24T3G Full bridge Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25...
Datasheet PDF File APTC60HM24T3G PDF File

APTC60HM24T3G
APTC60HM24T3G

Overview
APTC60HM24T3G Full bridge Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration • • • • 16 15 28 27 26 25 29 30 23 22 20 19 18 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A mJ August, 2009 1–6 APTC60HM24T3G – Rev 0 IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance www.
DataSheet4U.
com PD Maximum Power Dissipation IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTC60HM24T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V...


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