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PJ4800

Pan Jit International
Part Number PJ4800
Manufacturer Pan Jit International
Description 30V N-Channel MOSFET
Published Feb 26, 2011
Detailed Description PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS(ON), VGS@10V,IDS@8A=20mΩ • RDS(ON), VGS@5.0V,IDS@6A...
Datasheet PDF File PJ4800 PDF File

PJ4800
PJ4800

Overview
PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS(ON), VGS@10V,IDS@8A=20mΩ • RDS(ON), VGS@5.
0V,IDS@6A=31mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.
3 • Marking : 4800 PIN Assignment 8 7 6 5 1 2 3 4 1.
Source 2.
Source 3.
Source 4.
Gate 5.
Drain 6.
Drain 7.
Drain 8.
Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.
1mH,I D=8A,VDD=25V Power Dissipation TC=25oC TC=75oC TC=25oC SYMBOL VDS VGS ID I DM EAS PD TJ,TSTG RΘJA VALUE 30 +20 8 32 3.
2 3 2 -55 to +175 50 UNIT V V A A mJ W Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance(PCB Mounted)2 www.
DataSheet4U.
com Note: 1.
Maximum DC current limited by the package 2.
Surface mounted on FR4 board, t < 10 sec o C o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 01.
2009-REV.
00 PAGE .
1 PJ4800 ELECTRICAL CHARACTERISTICS (Tc=25oC,Unless Otherwise Noted ) PA RA M E TE R S YM B O L T E S T C O N D IT IO N S M IN .
T YP.
MAX.
U N IT S TA T IC D r a i n- S o ur c e B r e a k d o wn Vo lta g e V (BR)D S S V GS (TH) V GS = 0 V, I V D S = V GS , I D=25 0µA D=250µA D=8A D=6 A 30 1 8 10 16 23 - 3 20 31 +10 0 1 25 - V V mΩ mΩ nA µA µA A S G a t e Thr e s ho ld Vo lt a g e D r a i n - S o ur c e O n- s t a t e R e s i s t a nc e Gate-B ody Leakage Ze ro Ga te Vo lta g e D ra i n C ur r e n t O n- S t a t e D r a i n C u r r e nt F o r w a r d Tr a n s c o n d u c t a n c e V GS= 1 0 V, I R D S ( ON) V GS= 5 V,I I GS S V D...


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