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PJP10N65

Pan Jit International
Part Number PJP10N65
Manufacturer Pan Jit International
Description 650V N-Channel Enhancement Mode MOSFET
Published Feb 26, 2011
Detailed Description PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • ...
Datasheet PDF File PJP10N65 PDF File

PJP10N65
PJP10N65

Overview
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.
0Ω@VGS=10V, ID=5.
0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP10N65 PJF10N65 MARKING P10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 0 N6 5 P J F 1 0 N6 5 Uni ts V V 650 +3 0 10 40 156 1 .
2 5 10 40 50 0 .
4 A A W O Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e -5 5 to +1 5 0 750 0 .
8 6 2 .
5 2 .
5 100 O C Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1.
Maximum DC current limited by the package www.
DataSheet4U.
com PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.
25.
2009 PAGE .
1 PJP10N65 / PJF10N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n.
Typ .
Ma x.
Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 5.
0A VDS=650V, VGS=0V V GS =+3 0 V, V D S =0 V 650 2 .
0 - ...


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