DatasheetsPDF.com

HY5S5B2CLFP-HE

Hynix Semiconductor
Part Number HY5S5B2CLFP-HE
Manufacturer Hynix Semiconductor
Description 256M (8Mx32bit) Mobile SDRAM
Published Mar 2, 2011
Detailed Description 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array ...
Datasheet PDF File HY5S5B2CLFP-HE PDF File

HY5S5B2CLFP-HE
HY5S5B2CLFP-HE

Overview
256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
5 / Aug.
2008 1 11 256Mbit (8Mx32bit) Mobile SDR Memory HY5S5B2CLF(P) Series Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No.
0.
1 0.
2 1.
0 1.
1 1.
2 Initial Draft Initial Draft Release Correct IDD5 value: 85mA max -> 110mA max Insert (Page11) DPD specification [IDD7: 10uA min] - Updated Auto Refresh cycle during Power-up and Initialization Sequence (8 cycles to 2 cycles) - Editorial changes in some descriptions - Corrected the description of BURST TERMINATE - Corrected the CJE state on every command - Typo Corrected.
History Draft Date Nov.
2006 Apr.
2007 June.
2007 June.
2007 July.
2007 Remark Prelimi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)