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HY5S5B6ELFP-SE

Hynix Semiconductor
Part Number HY5S5B6ELFP-SE
Manufacturer Hynix Semiconductor
Description 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Published Mar 2, 2011
Detailed Description 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision Hist...
Datasheet PDF File HY5S5B6ELFP-SE PDF File

HY5S5B6ELFP-SE
HY5S5B6ELFP-SE

Overview
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No.
0.
1 0.
2 0.
3 1.
0 Initial Draft Modification of IDD Current Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA Final revision History Draft Date Aug.
2004 Oct.
2004 Jan.
2005 Jul.
2005 Remark Preliminary Preliminary Preliminary This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Jul.
2005 1 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series DESCRIPTION The Hynix Low Power SDRAM(Mobile SDR) is suited for non-PC application which use the batteries such as PDAs, 2.
5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.
The Hynix HY5S5B6ELF(P) is a 268,435,456bit CMOS Synchronous Dynamic Random Access Memory.
It is organized ...


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