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HY5S5B6GLF-S

Hynix Semiconductor
Part Number HY5S5B6GLF-S
Manufacturer Hynix Semiconductor
Description 256Mbit (16Mx16bit) Mobile SDR Memory
Published Mar 2, 2011
Detailed Description 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array ...
Datasheet PDF File HY5S5B6GLF-S PDF File

HY5S5B6GLF-S
HY5S5B6GLF-S

Overview
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Apr.
2006 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series 11 Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No.
0.
1 Initial Draft 1.
Changed 166MHz IDD1 : 60mA --> 75mA 133MHz IDD1 : 55mA --> 65mA 105MHz IDD1 : 50mA --> 55mA 2.
Remove CL2 operation (Page 13 to 14) 1.
Release History Dr...


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