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PSTG75HST12

Part Number	PSTG75HST12
Manufacturer	Powersem GmbH
Description	Powerline N-Channel Trench Gate-IGBT
Published	Mar 6, 2011
Detailed Description	ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 75HST12 VCES VCE(sat) IC25 IC75 ICM tSC I L N H J M B EG Fea...
Datasheet	PSTG75HST12 PDF File

Overview

ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 75HST12 VCES VCE(sat) IC25 IC75 ICM tSC I L N H J M B EG Features • Package with DCB ceramic base plate and soldering pins for PCB mounting • Isolation voltage over 3000 V∼ • Trench Gate • Enhancement Mode N-Channel Device • Non Punch through Structure • High Switching Speed • Low On-state Saturation Voltage • High Input Impedance Simplifies Gate Drive • Latch-Free Operation • Fully Short Circuit Rated to 10 µs • Wide RBSOA Applications • High Frequency Inverters • Motor Control • Switch Mode Power Supplies • High Frequency Welding • UPS Systems • PWM Drives Preliminary Data Sheet = 1200 V = 1.
9 V = 109 A = 75 A = 225 A = 10 µs A Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 109 75 225 136 10 -40.
.
.
+150 -40.
.
.
+125 V V A A A W µs °C °C K/W K/W V~ Nm mm mm g IGBT-per devices Diode-per devices IISOL ≤ 1 mA, 50/60 Hz, t= 1 min Mounting torque (M4) typ.
Creepage distance on surface Strike distance through air typ.
0.
55 1.
33 3000 1.
5-1.
8 min.
11.
2 4.
0 16 www.
DataSheet4U.
com Caution: These devices are sensitive to electrostatic discharge.
Users should observe proper ESD handling precautions.
POWERSEM GmbH, Walpersdorfer Str.
53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.
: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSTG 75HST12 Symbol ICES IGES VCE(sat) VGE(th) td(on) tr td(off) tf Eon Eoff Cies Coes Cies VFM trr IRRM NTC Test Conditions VCE = VCES, VGE = 0 V, VCE = 0 V, VGE = 20 V IC = 75 A, VGE = 15 V IC = 1 A, VGE = VCE Inductive load, TVJ = 125°C VCE = 50% VCEs, IC = 25 A RG = 5 Ω, VGE = ±15 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Characteristic Value typ.
max.
0.
6 3 1.
5 2.
3 mA mA µA V V V ns ns ns ns mJ mJ pF pF pF 1.
...

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PSTG75HST12 Powerline N-Channel Trench Gate-IGBT - Powersem GmbH

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