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HTT1127E

Renesas Technology
Part Number HTT1127E
Manufacturer Renesas Technology
Description Silicon NPN Epitaxial Twin Transistor
Published Mar 6, 2011
Detailed Description HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 (Previous ADE-208-1540) Rev.1.00 Aug.10.2005 Features • ...
Datasheet PDF File HTT1127E PDF File

HTT1127E
HTT1127E

Overview
HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 (Previous ADE-208-1540) Rev.
1.
00 Aug.
10.
2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.
2 x 0.
8 x 0.
5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor 2SC5849 Outline RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement 6 54 B1 6 E2 5 B2 4 Q1 Q2 123 Note: Marking is “R”.
C1 1 E1 2 C2 3 1.
Collector Q1 2.
Emitter Q1 3.
Collector Q2 4.
Base Q2 5.
Emitter Q2 6.
Base Q1 Rev.
1.
00 Aug 10, 2005 page 1 of 8 HTT1127E Absolute Maximum Ratings Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *Value on PCB.
(FR–4 (13 x 13 x 0.
635 mm)).
Ratings Q1 Q2 15 15 4 6 1.
5 1.
5 50 80 Total 200* 150 150 –55 to +150 –50 to +150 Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 *Value on PCB.
(FR–4 (13 x13 x 0.
635 mm)) 200 2 devices total 150 100 50 0 50 100 150 200 Ambient temperature Ta (°C) (Ta = 25°C) Unit V V V mA mW °C °C Rev.
1.
00 Aug 10, 2005 page 2 of 8 HTT1127E Q1 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 Collector cutoff current ICBO ⎯ Collector cutoff current ICEO ⎯ Emitter cutoff current IEBO ⎯ DC current transfer ratio hFE 100 Reverse transfer capacitance Cre ⎯ ⎯ ⎯ ⎯ 0.
1 ⎯ 1.
0 ⎯ 0.
1 120 150 0.
3 0.
45 V IC = 10 µA, IE = 0 µA VCB = 15 V, IE = 0 µA VCE = 4 V, RBE = infinite µA VEB = 0.
8 V, IC = 0 ⎯ VCE = 1 V, IC = 5 mA pF VCB = 1 V, f = 1 MHz Emitter ground Gain bandwidth product Forward transfer coefficient Noise figure fT |S21|2 NF 10 12 ⎯ GHz VCE = 1 V, IC = 5 mA, f = 1 GHz 13 16 ⎯ dB VCE = 1 V, IC = 5 mA, ⎯ 1.
0 1.
7 dB f = 900 MHz, ΓS = ΓL = 50...


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