18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0. 35dB (Typ. ) High associated gain @ f=12GHz Gs = 13. 5dB (Typ. )
Fig. 1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG GD-32
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 4000pcs. /reel
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Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25°C )
Ratings -4 -4 IDSS 50 125 -55 to +125
Unit V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO IGSS IDSS VGS(off) Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage
(Ta=25°C )
Test conditions MIN. IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V,ID=10mA f=12GHz -3 -15 -0. 1 12. 0 --
Limits TYP. ----13. 5 0. 35 MAX -50 60 -1. 5 -0. 5
Unit V µA mA V dB dB
Gs Associated gain www. DataSheet4U. com NFmin. Minimum noise figure
MITSUBISHI
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18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE...
MGF4941AL PDF File
