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TC2896

Part Number	TC2896
Manufacturer	TRANSCOM
Description	5 W Flange Ceramic Packaged GaAs Power FETs
Published	Mar 11, 2011
Detailed Description	TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical L...
Datasheet	TC2896 PDF File

Overview

TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz • Suitable for High Reliability Application • Lg = 0.
6 µm, Wg = 12 mm • Tight Vp ranges control • High RF input power handling capability • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to ...

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