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CET4401B

Chino-Excel Technology
Part Number CET4401B
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS...
Datasheet PDF File CET4401B PDF File

CET4401B
CET4401B

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.
9A, RDS(ON) = 57mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D CET4401B D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C ±20 -4.
9 -20 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units...


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