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CET4435A

Chino-Excel Technology
Part Number CET4435A
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CET4435A PDF File

CET4435A
CET4435A

Overview
CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.
8A, RDS(ON) = 24mΩ @VGS = -10V.
RDS(ON) = 35mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D D D G SOT-223 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -8.
8 -35 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.
DataSheet4U.
com Specification and data are subject to change without notice .
7 - 42 Rev 1.
2006.
January http://www.
cetsemi.
com CET4435A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -2.
1A VDS = -15V, ID = -4.
6A, VGS = -5V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 12 6 110 35 22 7 8 -2.
1 -1.
2 24 18 140 70 28 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -15V, ID = -8.
8A VDS = -15V, VGS = 0V, f = 1.
0 MHz 12 2220 550 230 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -8.
8A VGS = -4.
5V, ID = -5A -1 20 27 -3 24 35 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1...


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