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CEU630N

Chino-Excel Technology
Part Number CEU630N
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 13, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cel...
Datasheet PDF File CEU630N PDF File

CEU630N
CEU630N

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.
5A, RDS(ON) = 0.
36Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED630N/CEU630N D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 200 Units V V A A W W/ C C ±20 7.
5 30 54 0.
43 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
3 50 Units C/W C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 2.
2009.
March http://www.
cetsemi.
com CED630N/CEU630N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 7.
5A VDS = 160V, ID = 5.
9A, VGS = 10V VDD = 100V, ID = 5A, VGS = 10V,RGEN = 50Ω 24 15 116 25 19 3 5 7.
5 1.
5 48 30 232 50 24.
7 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 3.
5A VDS = 25V, VGS = 0V, f = 1.
0 MHz 4 930 130 25 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 3.
5A 2 0.
30 4 0.
36 V Ω BVDSS IDSS IGSSF IGSS...


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