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ZXTN5551Z

Diodes
Part Number ZXTN5551Z
Manufacturer Diodes
Description 160V - SOT89 / NPN high voltage transistor
Published Mar 15, 2011
Detailed Description ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complement...
Datasheet PDF File ZXTN5551Z PDF File

ZXTN5551Z
ZXTN5551Z

Overview
ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.
2W Complementary part number ZXTP5401Z Description A high voltage NPN transistor in a small outline surface mount package C Features • • 160V rating SOT89 package B E Applications • High voltage amplification E C Tape width (mm) 12 Quantity per reel 1000 Ordering information Device ZXTN5551ZTA Reel size (inches) 7 C B Pinout - top view Device marking N51 www.
DataSheet4U.
com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.
zetex.
com ZXTN5551Z Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Power dissipation at TA =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC PD Limit 180 160 6 600 1.
2 9.
6 -55 to 150 Unit V V V mA W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Value 104 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
www.
DataSheet4U.
com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.
zetex.
com ZXTN5551Z Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter Symbol Min.
180 160 Typ.
270 200 Max.
Unit V V Conditions IC = 100␮A IC = 1mA (*) IE = 10␮A VCB = 120V VCB = 120V, Tamb= 100°C IC = 10mA, IB = 1mA(*) IC = 50mA, IB = 5mA(*) IC = 10mA, IB = 1mA(*) IC = 50mA, IB = 5mA(*) IC = 1mA, VCE = 5V(*) 250 IC = 10mA, VCE = 5V(*) IC = 50mA, VCE = 5V(*) MHz 6 50 95 64 1256 140 260 ns ns ns ns pF IC = 10mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz(*) IC = 10mA, VCE = 10V, f=1kHz (†) Delay time Rise time Storage time Fall time t(d) t(r) t(s) t(f) VCC = 10V.
IC = 1omA, IB1 = IB2= 1mA.
Collector-base breakdown BVCBO voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current BVCEO ...


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