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Q68000

Part Number	Q68000
Manufacturer	Siemens Semiconductor
Description	NPN Silicon AF Transistors
Published	Mar 21, 2011
Detailed Description	NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Compl...
Datasheet	Q68000 PDF File

Overview

NPN Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638, BC 640 (PNP) q BC 635 … BC 639 2 3 1 Type BC 635 BC 637 BC 639 Marking – Ordering Code Q68000-A3360 Q68000-A2285 Q68000-A3361 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 63 5 –10 (hFE = 63 … 160), or BC 63 5 –16 (hFE = 100 … 250) are available.
Ordering codes upon request.
www.
DataSheet4U.
com 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 5.
91 BC 635 … BC 639 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg Values BC 635 45 45 Unit BC 637 60 60 5 1 1.
5 100 200 0.
8 (1) 150 – 65 … + 150 W ˚C mA A BC 639 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 75 K/W www.
DataSheet4U.
com 1) 2) If the transistors with max.
4 mm lead length are fixed on PCBs with a min.
10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
Mounted on Al heat sink 15 mm × 25 mm × 0.
5 mm.
Semiconductor Group 2 BC 635 … BC 639 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 Collector-base breakdown voltage IC = 100 µA BC 635 BC 637 BC 639 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V AC ch...

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Q68000 NPN Silicon AF Transistors - Siemens Semiconductor

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