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IPA028N08N3G

Infineon Technologies
Part Number IPA028N08N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2011
Detailed Description OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC...
Datasheet PDF File IPA028N08N3G PDF File

IPA028N08N3G
IPA028N08N3G

Overview
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS(on),max ID 80 V 2.
8 mW 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D T C=25 °C2) 89 T C=100 °C 62 Pulsed drain current3) I D,pulse T C=25 °C 352 Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W 1430 Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C 42 Operating and storage temperature T j, T stg -55 .
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175 IEC climatic category; DIN IEC 68-1 55...


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