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L14C1

Fairchild Semiconductor
Part Number L14C1
Manufacturer Fairchild Semiconductor
Description HERMETIC SILICON PHOTOTRANSISTOR
Published Mar 22, 2005
Detailed Description HERMETIC SILICON PHOTOTRANSISTOR L14C1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14C2 0...
Datasheet PDF File L14C1 PDF File

L14C1
L14C1

Overview
HERMETIC SILICON PHOTOTRANSISTOR L14C1 PACKAGE DIMENSIONS 0.
230 (5.
84) 0.
209 (5.
31) 0.
195 (4.
96) 0.
178 (4.
52) L14C2 0.
030 (0.
76) MAX 0.
210 (5.
34) MAX 0.
500 (12.
7) MIN 0.
100 (2.
54) 0.
100 (2.
54) DIA.
2 1 0.
038 (.
97) NOM 0.
046 (1.
16) 0.
036 (0.
92) 45° Ø0.
021 (0.
53) 3X 3 0.
050 (1.
27) SCHEMATIC (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1.
Dimensions for all drawings are in inches (mm).
2.
Tolerance of ± .
010 (.
25) on all non-nominal dimensions unless otherwise specified.
1 EMITTER DESCRIPTION The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES • Hermetically sealed package • Wide reception angle  2001 Fairchild Semiconductor Corporation DS300305 6/01/01 1 OF 4 www.
fairchildsemi.
com HERMETIC SILICON PHOTOTRANSISTOR L14C1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 50 50 7 300 600 L14C2 Unit °C °C °C °C V V V mW mW NOTE: 1.
Derate power dissipation linearly 3.
00 mW/°C above 25°C ambient.
2.
Derate power dissipation linearly 6.
00 mW/°C above 25°C case.
3.
RMA flux is recommended.
4.
Methanol or isopropyl alcohols are recommended as cleaning agents.
5.
Soldering iron tip 1/16” (1.
6mm) minimum from housing.
6.
As long as leads are not under any stress or spring tension.
7.
Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8.
Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature.
A GaAs source of 3.
0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER...


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