DatasheetsPDF.com

SIHLU024

Vishay Siliconix
Part Number SIHLU024
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Mar 29, 2011
Detailed Description www.vishay.com IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
Datasheet PDF File SIHLU024 PDF File

SIHLU024
SIHLU024

Overview
www.
vishay.
com IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.
0 V 18 4.
5 12 Single 0.
10 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Surface mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
 The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
DPAK (TO-252) IRLR024PbF SiHLR024-E3 DPAK (TO-252) SiHLR024TRL-GE3 - DPAK (TO-252) SiHLR024TR-GE3 IRLR024TRPbF a SiHLR024T-E3 a IPAK (TO-251) SiHLU024-GE3 IRLU024PbF SiHLU024-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a VGS at 5.
0 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s VDS VGS ID IDM EAS PD dV/dt TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum jun...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)