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SIHLU120

Vishay Siliconix
Part Number SIHLU120
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Mar 29, 2011
Detailed Description www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D...
Datasheet PDF File SIHLU120 PDF File

SIHLU120
SIHLU120

Overview
www.
vishay.
com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.
0 V 12 0.
27 3.
0 7.
1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHLR120-GE3 IRLR120PbF-BE3 Lead (Pb)-free IRLR120PbF Note a.
See device orientation DPAK (TO-252) SiHLR120TRL-GE3 IRLR120TRLPbF-BE3 IRLR120TRLPbF a DPAK (TO-252) SiHLR120TR-GE3 IRLR120TRPbF-BE3 IRLR120TRPbF a DPAK (TO-252) SiHLR120TRR-GE3 IRLR120TRRPbF a IPAK (TO-251) SiHLU120-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 5 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating ju...


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