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SIA444DJT

Vishay Siliconix
Part Number SIA444DJT
Manufacturer Vishay Siliconix
Description N-Channel 30 V (D-S) MOSFET
Published Mar 31, 2011
Detailed Description New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0...
Datasheet PDF File SIA444DJT PDF File

SIA444DJT
SIA444DJT

Overview
New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.
017 at VGS = 10 V 0.
022 at VGS = 4.
5 V ID (A)a 12 4.
5 Qg (Typ.
) 7 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Ultra-Thin 0.
6 mm height • Compliant to RoHS Directive 2002/95/EC Thin PowerPAK SC-70-6L-Single 0.
6 mm APPLICATIONS • DC/DC Converter • High Frequency Switching Marking Code AMX Part # code XXX Lot Traceability and Date code S G D D 1 6 D D 2 5 D G 3 4 S S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Tempe...


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