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PH9030L

NXP Semiconductors
Part Number PH9030L
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Published Apr 14, 2011
Detailed Description PH9030L N-channel TrenchMOS logic level FET Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General de...
Datasheet PDF File PH9030L PDF File

PH9030L
PH9030L

Overview
PH9030L N-channel TrenchMOS logic level FET Rev.
01 — 29 July 2008 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.
3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.
4 Quick reference data Table 1.
VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max 30 63 62.
5 Unit V A W drain-source voltage 25 °C ≤ Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 10; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 8; see Figure 9 3.
2 nC Static characteristics RDSon drain-source on-state resistance 7 9 mΩ www.
DataSheet4U.
com NXP Semiconductors PH9030L N-channel TrenchMOS logic level FET 2.
Pinning information Table 2.
Pin 1,2,3 4 mb S G D Pinning information Symbol Description source gate mounting base; connected to drain 1 2 3 4 mb D Simplified outline Graphic symbol G mbb076 S SOT669 (LFPAK) 3.
Ordering information Table 3.
Ordering information Type number Package Name PH9030L LFPAK Description Version Plastic single-ended surface-mounted package (LFPAK); SOT669 4 leads 4.
Limiting values Table 4.
Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tj = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS peak drain current total power dissipation storage temperature junction temperature source current Tmb ...


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