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PH9930L

NXP Semiconductors
Part Number PH9930L
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Published Apr 14, 2011
Detailed Description PH9930L N-channel TrenchMOS logic level FET Rev. 01 — 23 August 2007 Product data sheet 1. Product profile 1.1 General d...
Datasheet PDF File PH9930L PDF File

PH9930L
PH9930L

Overview
PH9930L N-channel TrenchMOS logic level FET Rev.
01 — 23 August 2007 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses I 100 % ruggedness tested 1.
3 Applications I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I PC motherboards 1.
4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 9.
9 mΩ I ID ≤ 63 A I QGD = 3.
2 nC (typ) 2.
Pinning information Table 1.
Pin 1, 2, 3 4 mb Pinning Description source (S) gate (G) mounting base; connected to drain (D) mb D Simplified outline Symbol G mbb076 S 1 2 3 4 SOT669 (LFPAK) www.
DataSheet4U.
com NXP Semiconductors PH9930L N-channel TrenchMOS logic level FET 3.
Ordering information Table 2.
Ordering information Package Name PH9930L LFPAK Description plastic single-ended surface-mounted package (lfpak); 4 leads Version SOT669 Type number 4.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 33 A; tp = 0.
08 ms; VDS ≤ 30 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 30 30 ±20 63 39 214 62.
5 +150 +150 52 208 53 Unit V V V A A A W °C °C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitiv...


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