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CY62147EV18

Cypress Semiconductor
Part Number CY62147EV18
Manufacturer Cypress Semiconductor
Description 4-Mbit (256K x 16) Static RAM
Published Apr 15, 2011
Detailed Description CY62147EV18 MoBL® 4-Mbit (256K x 16) Static RAM is ideal for providing More Battery Life™ (MoBL) in portable applicati...
Datasheet PDF File CY62147EV18 PDF File

CY62147EV18
CY62147EV18

Overview
CY62147EV18 MoBL® 4-Mbit (256K x 16) Static RAM is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones.
The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).
The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), both the Byte High Enable and the Byte Low Enable are disabled (BHE, BLE HIGH), or during an active write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW.
If Byte Low Enable (BLE) is LOW then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A17).
If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).
To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.
If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15.
See the “Truth Table” on page 10 for a complete description of read and write modes.
For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Features ■ ■ ■ ■ Very high speed: 55 ns Wide voltage range: 1.
65 V to 2.
25 V Pin compatible with CY62147DV18 Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complement...


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