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DN030

AUK
Part Number DN030
Manufacturer AUK
Description NPN Silicon Transistor
Published Apr 19, 2011
Detailed Description Semiconductor DN030 NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT...
Datasheet PDF File DN030 PDF File

DN030
DN030

Overview
Semiconductor DN030 NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.
1V Typ.
@IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application Ordering Information Type NO.
DN030 Marking DNO30 Package Code TO-92 Outline Dimensions unit : mm www.
DataSheet4U.
com PIN Connections 1.
Emitter 2.
Collector 3.
Base KST-9082-000 1 DN030 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 300 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT C ob Test Condition IC=50µA, I E =0 IC=1mA, IB =0 IE =50µA, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =300mA IC=100mA, IB =10mA IC=300mA, IB =30mA IC=100mA, IB =10mA IC=300mA, IB =30mA VCE=5V, IC =10mA VCB=10V, IE =0, f=1MHz Min.
15 12 5 200 70 - Typ.
300 3 Max.
0.
1 0.
1 450 0.
2 0.
5 1.
2 1.
7 - Unit V V V µA µA V V V V MHz PF Base-Emitter saturation voltage Transition frequency Collector output capacitance www.
DataSheet4U.
com KST-9082-000 2 DN030 Electrical Characteristic Curves Fig.
1 PC - Ta Fig.
2 IC -VBE Fig.
3 hFE - IC Fig.
4 IC - VCE ` Fig.
5 VCE(sat) - IC www.
DataSheet4U.
com KST-9082-000 3 ...


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