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IRG7PH46UD-EP

Part Number	IRG7PH46UD-EP
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Apr 25, 2011
Detailed Description	PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) t...
Datasheet	IRG7PH46UD-EP PDF File

Overview

PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH46UDPbF IRG7PH46UD-EP C VCES = 1200V I NOMINAL = 40A G E TJ(max) = 150°C Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation n-channel C VCE(on) typ.
= 1.
7V C Applications • • • • U.
P.
S.
Welding Solar Inverter Induction Heating GC E TO-247AC IRG7PH46UDPbF E GC TO-247AD IRG7PH46UD-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Mounting Torque, 6-32 or M3 Screw Max.
1200 108 57 40 120 160 108 57 160 ±30 390 156 -55 to +150 Units V c A d Continuous Gate-to-Emitter Voltage V W °C Soldering Temperature, for 10 sec.
www.
DataSheet4U.
com Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA f Thermal Resistance Junction-to-Case-(each Diode) f Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mou...

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IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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