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L29S800F

ETC
Part Number L29S800F
Manufacturer ETC
Description 8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY
Published Mar 22, 2005
Detailed Description LinkSmart Rev. No. Approved date A July 17 2002 L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PRELIMINARY...
Datasheet PDF File L29S800F PDF File

L29S800F
L29S800F

Overview
LinkSmart Rev.
No.
Approved date A July 17 2002 L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PRELIMINARY A Revision history History Initial issue Remark (purpose) Preliminary 1 071802 LinkSmart ! L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PRELIMINARY A FEATURES • Single 3.
0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands 2 Uses same software commands as E PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 8K word, two 4K words, one 16K word, and fifteen 32...


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