DatasheetsPDF.com

DE275-102N06A

Part Number	DE275-102N06A
Manufacturer	IXYS Corporation
Description	RF Power MOSFET
Published	Apr 28, 2011
Detailed Description	DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C...
Datasheet	DE275-102N06A PDF File

Overview

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 2.
0W/°C above 25°C Tc = 25°C VDSS ID25 RDS(on) Maximum Ratings 1000 1000 ±20 ±30 8 48 6 20 5 >200 590 300 3.
0 0.
25 0.
50 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 1000 V 8A 1.
5 Ω 590 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 PDC DRA...

Similar Datasheet

DE275-102N06A RF Power MOSFET - IXYS Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)