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5303D

Unisonic Technologies
Part Number 5303D
Manufacturer Unisonic Technologies
Description HIGH VOLTAGE NPN TRANSISTOR
Published May 1, 2011
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 5303D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRI...
Datasheet PDF File 5303D PDF File

5303D
5303D

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 5303D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION 1 The UTC 5303D is a high voltage silicon triple diffused type NPN transistor with diode.
This chip is built in free-wheeling diode , makeing efficient anti-saturation operation.
„ FEATURES TO-251 * Not Necessary to Interest an hFE Value * Need Very Low Base Drive * Can Be Used In Half Bridge Light Ballast Application „ INTERNAL SCHEMATIC DIAGRAM (2) C Lead-free: 5303DL Halogen-free:5303DG (1) B (3) E „ ORDERING INFORMATION Normal 5303D-TM3-T Ordering Number Lead Free Plating 5303DL-TM3-T Halogen Free 5303DG-TM3-T Package TO-251 Pin Assignment 1 2 2 B C E Packing Tube www.
DataSheet4U.
com www.
unisonic.
com.
tw Copyright © 2009 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R223-004.
a 5303D „ Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) 4 A ICM Base Current IB 1 A Base Peak Current (tp<5ms) IBM 2 A Collector Dissipation (TC≤25°С) PC 25 W Maximum Operating Junction Temperature TJ +150 °С Storage Temperature Range TSTG -65~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA PARAMETER SYMBOL θJA θJC RATINGS 100 6.
25 UNIT °С/W °С/W Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT) VBE(SAT2) tON tSTG tF VF tF TEST CONDITIONS IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE =5V, IC =10mA VCE =5V, IC =400mA VCE =5V, IC =1A IC =0.
5A, IB =0.
1A IC =1A, IB =0.
25A IC =0.
...


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