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2SK3502-01MR

Fuji Electric
Part Number 2SK3502-01MR
Manufacturer Fuji Electric
Description N CHANNEL SILICON POWER MOSET
Published May 12, 2011
Detailed Description 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power ...
Datasheet PDF File 2SK3502-01MR PDF File

2SK3502-01MR
2SK3502-01MR


Overview
2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 600 V Continuous drain current ID ±10 A Pulsed drain current ID(puls] ±40 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 10 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max.
power dissipation PD Ta=25°C Tc=25°C 2.
16 50 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C *1 L=3.
99mH, Vcc=60V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 600V Electrical characteristics (Tc =25°C unless otherwise specified) Equivalent circuit schematic Drain(D) Gate(G) Source(S) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V Tch=25°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V Tch=125°C ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Ω VCC=250V ID=10A VGS=10V L=3.
99mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C Min.
Typ.
Max.
Units 600 V 3.
0 5.
0 ...


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