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IXFH28N50F

IXYS Corporation
Part Number IXFH28N50F
Manufacturer IXYS Corporation
Description HiPerRF Power MOSFETs
Published May 13, 2011
Detailed Description Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche...
Datasheet PDF File IXFH28N50F PDF File

IXFH28N50F
IXFH28N50F

Overview
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A = 190mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 500 500 ± 20 ± 30 28 112 28 35 1.
5 10 315 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) TL 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-247 TO-247 TO-268 300 Md Weight 1.
13/10 Nm/lb.
in.
6 4 g g Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.
5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2.
0 4.
0 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 ID25 Note 1 TJ = 125°C ±100 nA 50 µA 1.
5 mA 190 m Ω © 2002 IXYS All rights reserved 98883 (1/02) IXFH 28N50F IXFT 28N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
Note 1 12 18 3000 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 130 15 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 RG = 2.
0 Ω (External) 13 41 ...


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