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IXFL30N120P

IXYS Corporation
Part Number IXFL30N120P
Manufacturer IXYS Corporation
Description Polar HiPerFET Power MOSFET
Published May 13, 2011
Detailed Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG...
Datasheet PDF File IXFL30N120P PDF File

IXFL30N120P
IXFL30N120P

Overview
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.
DataSheet4U.
net IXFL30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 18A 380mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 18 80 15 1.
5 15 357 -55 .
.
.
+150 150 -55 .
.
.
+150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA Mounting force t = 1s 300 260 2500...


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