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IXFN160N30T

Part Number	IXFN160N30T
Manufacturer	IXYS Corporation
Description	GigaMOS Power MOSFET
Published	May 13, 2011
Detailed Description	Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I...
Datasheet	IXFN160N30T PDF File

Overview

Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr VDSS ID25 = = 300V 130A 19mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ±20 ±30 130 440 40 3 20 900 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g G S D G = Gate S = Source D = Drain Either Source Te...

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IXFN160N30T GigaMOS Power MOSFET - IXYS Corporation

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