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IXFN26N100P

Part Number	IXFN26N100P
Manufacturer	IXYS Corporation
Description	Polar Power MOSFET HiPerFET
Published	May 13, 2011
Detailed Description	PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG...
Datasheet	IXFN26N100P PDF File

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.
DataSheet4U.
net IXFN26N100P VDSS ID25 RDS(on) trr = 1000V = 23A ≤ 390mΩ ≤ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 23 65 13 1.
0 20 595 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source t...

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IXFN26N100P Polar Power MOSFET HiPerFET - IXYS Corporation

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